基于Si:H/SiC:H PECVD多层结构的高对比度分布Bragg反射器

2016 13th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE) Pub Date : 2016-09-01 DOI:10.1109/ICEEE.2016.7751225

H. E. Martinez-Mateo, A. Kosarev, A. Pevtsov, A. V. Zherzdev, N. Feoktistov, Y. Kudriavtsev

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引用次数: 0

摘要

本文研究了基于等离子体沉积Si:H/SiC:H薄膜的高对比度分布式Bragg反射器(dbr)。利用光谱椭偏法测量了这些材料的光学常数，并将其用于光谱透射率和反射率的理论计算。在λ= 835 (DBR1)和565 nm (DBR2)处，设计了13层薄膜的阻挡带中心。在带宽Δλ=260 nm处测量DBR1的高反射率(>90%)和DBR2的低反射率(70%)。DBR1的阻带特性和与太阳能电池制造的完全兼容，使其成为PECVD PV太阳能电池的后反射器。而DBR2结构的滤光性能较差，表明Si:H层对光吸收有显著影响。

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High contrast distributed Bragg reflectors based on Si:H/SiC:H PECVD multilayer structure

In this work we study the high contrast distributed Bragg reflectors (DBRs) based on plasma deposited Si:H/SiC:H films. Optical constants of these materials were measured by means of spectral ellipsometry and used in theoretical calculations of spectral transmittance and reflectance. The stacks consisted of 13 layers of the films were designed to provide stop band center at λ= 835 (DBR1) and 565 nm (DBR2). High reflectance (>90%) for DBR1 and lower value of 70% for DBR2 was measured with bandwidth Δλ=260 nm. The properties of DBR1 are of promise as back reflector in PECVD PV solar cells because of his stop band characteristics and complete compatibility with solar cell fabrication. While DBR2 structure shows worse filter properties suggesting significant effect of light absorption in Si:H layers.

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2016 13th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)

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