{"title":"用于先进晶体管制造的灌注加工","authors":"W. Skinner, M. Gwinn, J. Hautala, T. Kuroi","doi":"10.1109/ASMC.2006.1638746","DOIUrl":null,"url":null,"abstract":"Production capable infusion processing equipment for ultra shallow doping and surface engineering is now available. Shrinking device dimensions require extremely shallow doping for many applications. New techniques are necessary in order to manufacture source drain extensions (SDE) and for DRAM poly doping. Channel engineering is required for advanced gates. High throughput, tight process control and low contamination are required from the process equipment. Epion Corporation has developed the nFusiontrade 300mm doping system that offers solutions for these applications. The production worthiness is characterized with high doping rates, long term repeatability, depth control and low contamination","PeriodicalId":407645,"journal":{"name":"The 17th Annual SEMI/IEEE ASMC 2006 Conference","volume":"76 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Infusion processing for advanced transistor manufacturing\",\"authors\":\"W. Skinner, M. Gwinn, J. Hautala, T. Kuroi\",\"doi\":\"10.1109/ASMC.2006.1638746\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Production capable infusion processing equipment for ultra shallow doping and surface engineering is now available. Shrinking device dimensions require extremely shallow doping for many applications. New techniques are necessary in order to manufacture source drain extensions (SDE) and for DRAM poly doping. Channel engineering is required for advanced gates. High throughput, tight process control and low contamination are required from the process equipment. Epion Corporation has developed the nFusiontrade 300mm doping system that offers solutions for these applications. The production worthiness is characterized with high doping rates, long term repeatability, depth control and low contamination\",\"PeriodicalId\":407645,\"journal\":{\"name\":\"The 17th Annual SEMI/IEEE ASMC 2006 Conference\",\"volume\":\"76 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The 17th Annual SEMI/IEEE ASMC 2006 Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASMC.2006.1638746\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 17th Annual SEMI/IEEE ASMC 2006 Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC.2006.1638746","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Infusion processing for advanced transistor manufacturing
Production capable infusion processing equipment for ultra shallow doping and surface engineering is now available. Shrinking device dimensions require extremely shallow doping for many applications. New techniques are necessary in order to manufacture source drain extensions (SDE) and for DRAM poly doping. Channel engineering is required for advanced gates. High throughput, tight process control and low contamination are required from the process equipment. Epion Corporation has developed the nFusiontrade 300mm doping system that offers solutions for these applications. The production worthiness is characterized with high doping rates, long term repeatability, depth control and low contamination
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