双核处理器模式转换过程中的电源轨噪声最小化

D. Dwivedi, S. K
{"title":"双核处理器模式转换过程中的电源轨噪声最小化","authors":"D. Dwivedi, S. K","doi":"10.1109/ACT.2010.26","DOIUrl":null,"url":null,"abstract":"Optimum Power gating sleep transistor design and implementation are critical to a successful low-power design. The large magnitude of supply and ground bounces, which arise from power mode transitions in large power gating structures results in wrong functioning of the circuit. We propose a novel power gating technique showing the trade-off between wake-up time and supply noise. This technique is simulated for a dual-core processor for 32nm CMOS technology and the supply rail noise is reduced to 1.35 mV.","PeriodicalId":147311,"journal":{"name":"2010 Second International Conference on Advances in Computing, Control, and Telecommunication Technologies","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Power Rail Noise Minimization during Mode Transition in a Dual Core Processor\",\"authors\":\"D. Dwivedi, S. K\",\"doi\":\"10.1109/ACT.2010.26\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Optimum Power gating sleep transistor design and implementation are critical to a successful low-power design. The large magnitude of supply and ground bounces, which arise from power mode transitions in large power gating structures results in wrong functioning of the circuit. We propose a novel power gating technique showing the trade-off between wake-up time and supply noise. This technique is simulated for a dual-core processor for 32nm CMOS technology and the supply rail noise is reduced to 1.35 mV.\",\"PeriodicalId\":147311,\"journal\":{\"name\":\"2010 Second International Conference on Advances in Computing, Control, and Telecommunication Technologies\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-12-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 Second International Conference on Advances in Computing, Control, and Telecommunication Technologies\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ACT.2010.26\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Second International Conference on Advances in Computing, Control, and Telecommunication Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ACT.2010.26","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

最佳功率门控休眠晶体管的设计和实现是成功的低功耗设计的关键。在大功率门控结构中,由于功率模式转换而产生的大幅度的电源和地反弹会导致电路的错误工作。我们提出了一种新的功率门控技术,显示了唤醒时间和电源噪声之间的权衡。该技术在32nm CMOS双核处理器上进行了仿真,电源轨噪声降至1.35 mV。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Power Rail Noise Minimization during Mode Transition in a Dual Core Processor
Optimum Power gating sleep transistor design and implementation are critical to a successful low-power design. The large magnitude of supply and ground bounces, which arise from power mode transitions in large power gating structures results in wrong functioning of the circuit. We propose a novel power gating technique showing the trade-off between wake-up time and supply noise. This technique is simulated for a dual-core processor for 32nm CMOS technology and the supply rail noise is reduced to 1.35 mV.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信