集成220-260 GHz雷达前端

T. Merkle, S. Wagner, A. Tessmann, M. Kuri, H. Massler, A. Leuther
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引用次数: 5

摘要

本文的主题是为工作在240ghz中心频率的毫米波宽带雷达系统设计的集成收发器前端MMIC。MMIC采用35 nm基于InAIAs/InGaAs的变质HEMT技术实现。发射功率、接收机转换增益和噪声系数等关键射频参数在40ghz的1db定义带宽上实现。MMIC也在WR-3波导模块中进行了封装和测试。在220和260 GHz之间,测量到的输出功率为6 dBm,平坦度优于1 dB,平均接收噪声系数为7 dB,转换增益为10 dB。在增加直流漏极电压的情况下,收发器MMIC的片上测量输出功率达到8 dBm。为了对收发器MMIC的子功能进行额外的片上分离表征,还制造了几个分断电路。例如,发射路径的功率放大器在240 GHz时实现了10 dBm的饱和输出功率,而消耗的芯片面积仅为$\mathbf{500}\ \mathbf{x}\ \mathbf{225}\ \mu \text{m}$。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Integrated 220–260 GHz Radar Frontend
Subject of this paper is an integrated transceiver frontend MMIC that was designed for millimeter-wave wideband radar systems operating at a center frequency of 240 GHz. The MMIC was implemented using a 35 nm InAIAs/InGaAs based metamorphic HEMT technology. The key RF parameters of transmit power, receiver conversion gain and noise figure, are achieved over a 1-dB defined bandwidth of 40 GHz. The MMIC was also packaged and tested in a WR-3 waveguide module. Between 220 and 260 GHz, an output power of 6 dBm with a flatness of better than 1 dB was measured, as well as an average receiver noise figure of 7 dB and a conversion gain of 10 dB. The on-wafer measured output power of the transceiver MMIC reached 8 dBm applying an increased dc drain voltage. Several breakout circuits were manufactured for additional separate on-wafer characterization of sub-functions of the transceiver MMIC. For example, the power amplifier of the transmit path achieved a saturated output power of 10 dBm at 240 GHz while consuming a chip area of only $\mathbf{500}\ \mathbf{x}\ \mathbf{225}\ \mu \text{m}$.
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