J. Okamura, Y. Okada, M. Koyanagi, Y. Takeuchi, M. Yamada, K. Sakurai, S. Imada, S. Saito
{"title":"用于高密度dram的解码源感测放大器","authors":"J. Okamura, Y. Okada, M. Koyanagi, Y. Takeuchi, M. Yamada, K. Sakurai, S. Imada, S. Saito","doi":"10.1109/VLSIC.1989.1037510","DOIUrl":null,"url":null,"abstract":"The decoded-source sense amplifier (DSSA) for high-speed, high-density DRAMs is discussed. To prevent clamping of the common-source node of the sense amplifier caused by bit-line discharge current, the DSSA has an additional latching transistor with a gate controlled by a column decoder. The DSSA has been successfully installed in a 4-Mb DRAM and provided a RAS access time of 60 ns under a V/sub cc/ of 4 V at 85 degrees C. >","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Decoded-source sense amplifier for high-density DRAMs\",\"authors\":\"J. Okamura, Y. Okada, M. Koyanagi, Y. Takeuchi, M. Yamada, K. Sakurai, S. Imada, S. Saito\",\"doi\":\"10.1109/VLSIC.1989.1037510\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The decoded-source sense amplifier (DSSA) for high-speed, high-density DRAMs is discussed. To prevent clamping of the common-source node of the sense amplifier caused by bit-line discharge current, the DSSA has an additional latching transistor with a gate controlled by a column decoder. The DSSA has been successfully installed in a 4-Mb DRAM and provided a RAS access time of 60 ns under a V/sub cc/ of 4 V at 85 degrees C. >\",\"PeriodicalId\":136228,\"journal\":{\"name\":\"Symposium 1989 on VLSI Circuits\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-05-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Symposium 1989 on VLSI Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.1989.1037510\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Symposium 1989 on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.1989.1037510","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Decoded-source sense amplifier for high-density DRAMs
The decoded-source sense amplifier (DSSA) for high-speed, high-density DRAMs is discussed. To prevent clamping of the common-source node of the sense amplifier caused by bit-line discharge current, the DSSA has an additional latching transistor with a gate controlled by a column decoder. The DSSA has been successfully installed in a 4-Mb DRAM and provided a RAS access time of 60 ns under a V/sub cc/ of 4 V at 85 degrees C. >