UV 400光刻中接触方式对分辨率的影响

2011 International Students and Young Scientists Workshop "Photonics and Microsystems" Pub Date : 2011-07-08 DOI:10.1109/STYSW.2011.6155843

K. Indykiewicz, W. Macherzyński, R. Paszkiewicz

{"title":"UV 400光刻中接触方式对分辨率的影响","authors":"K. Indykiewicz, W. Macherzyński, R. Paszkiewicz","doi":"10.1109/STYSW.2011.6155843","DOIUrl":null,"url":null,"abstract":"Optical lithography is the most popular lithographic technique in modern semiconductor manufacture. High pattern resolution is very desirable parameter in many devices. Because of that different contact methods were investigated. In the article we present influence of contact modes between the mask and the sample on pattern resolution. We defined the maximal resolution of test structures obtained for various distances of proximity contacts in optical lithography process.","PeriodicalId":261643,"journal":{"name":"2011 International Students and Young Scientists Workshop \"Photonics and Microsystems\"","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"The influence of contact mode on resolution in UV 400 lithography\",\"authors\":\"K. Indykiewicz, W. Macherzyński, R. Paszkiewicz\",\"doi\":\"10.1109/STYSW.2011.6155843\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Optical lithography is the most popular lithographic technique in modern semiconductor manufacture. High pattern resolution is very desirable parameter in many devices. Because of that different contact methods were investigated. In the article we present influence of contact modes between the mask and the sample on pattern resolution. We defined the maximal resolution of test structures obtained for various distances of proximity contacts in optical lithography process.\",\"PeriodicalId\":261643,\"journal\":{\"name\":\"2011 International Students and Young Scientists Workshop \\\"Photonics and Microsystems\\\"\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-07-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 International Students and Young Scientists Workshop \\\"Photonics and Microsystems\\\"\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/STYSW.2011.6155843\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Students and Young Scientists Workshop \"Photonics and Microsystems\"","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/STYSW.2011.6155843","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

光学光刻是现代半导体制造中最常用的光刻技术。在许多器件中，高模式分辨率是非常理想的参数。因此研究了不同的接触方法。本文讨论了掩模与样品之间的接触方式对图案分辨率的影响。定义了光刻过程中不同距离的近距离接触所得到的测试结构的最大分辨率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

The influence of contact mode on resolution in UV 400 lithography

Optical lithography is the most popular lithographic technique in modern semiconductor manufacture. High pattern resolution is very desirable parameter in many devices. Because of that different contact methods were investigated. In the article we present influence of contact modes between the mask and the sample on pattern resolution. We defined the maximal resolution of test structures obtained for various distances of proximity contacts in optical lithography process.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2011 International Students and Young Scientists Workshop "Photonics and Microsystems"

自引率

0.00%

发文量