反转层发射极晶闸管是一种新型的功率器件概念

Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Pub Date : 1994-05-31 DOI:10.1109/ISPSD.1994.583751

F. Udrea, G. Amaratunga

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引用次数: 12

摘要

提出了一种新型的mos控制功率器件——逆变层发射极晶闸管(ILET)。操作原理基于一个新的物理概念，该概念表达了反转层从多数载流子通道到少数载流子注入器的转变。该器件以组合晶闸管- igbt模式工作，具有由反转层形成的晶闸管发射极。在导通状态下，MOS结构的有效通道是亚微米级的，并且不影响器件的关断电压阻断能力。

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The inversion layer emitter thyristor - a novel power device concept

A novel MOS-controlled power device termed the Inversion Layer Emitter Thyristor (ILET) is proposed. The principle of operation is based on a new physical concept that expresses the transition of an inversion layer from a majority carrier channel into a minority carrier injector. The device operates in a combined thyristor-IGBT mode having the thyristor emitter formed by an inversion layer. In the on-state the effective channel of the MOS structure is of sub-micrometre order, and does not affect the off-state voltage blocking capability of the device.

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Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics

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