提高了宽增益带宽垂直腔面发射激光器的温度特性

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.519323

M. Kajita, T. Kawakami, T. Yoshikawa, A. Uemura, Y. Sugimoto, K. Kasahara

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引用次数: 4

摘要

利用不同带隙能量的多量子阱有源层，制备了具有宽增益带宽的InGaAs QW垂直腔面发射激光器，其温度范围提高了20/spl℃以上。

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Improved temperature characteristics of a vertical cavity surface-emitting laser with a broad gain bandwidth

A InGaAs QW vertical cavity surface-emitting laser with a broad-gain bandwidth was fabricated by using multiple-quantum-well active layers with different bandgap energies, increasing the temperature range by more than 20/spl deg/C.

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Proceedings of IEEE 14th International Semiconductor Laser Conference

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