6 - 10 GHz低温砷化镓pHEMT LNA MMIC

2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI:10.1109/RFIT49453.2020.9226214

Hayato Shimizu, Yudai Iwashita, Ryotaro Iwamoto, Tamio Kawaguchi, K. Nishikawa

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引用次数: 0

摘要

本文演示了一种低温宽带GaAs pHEMT LNA MMIC。采用改进的GaAs pHEMT模型设计了LNA MMIC，该模型包含了每种器件材料的热特性。MMIC采用0.25 μ m GaAs pHEMT工艺制备。所制备的LNA MMIC在6-10 GHz和77K工作温度下的噪声系数小于0.3 dB，相关增益超过15dB。相应的回波损耗均优于10db。在7GHz时，LNA的噪声系数为0.11dB(噪声温度为7.7K)，相关增益为20dB。功耗为25mw。MMIC占用1.4mm。这些性能与LNAs在10K-20K工作温度下的性能相同。

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6 – 10 GHz Cryogenic GaAs pHEMT LNA MMIC

This paper demonstrates a cryogenic broadband GaAs pHEMT LNA MMIC. The LNA MMIC was designed by using modified GaAs pHEMT model, which includes the thermal characteristics of each device material. The MMIC was fabricated by using a commercial $0.25\mu m$ GaAs pHEMT process. The fabricated LNA MMIC achieved a noise figure of less than 0.3 dB and an associated gain of over 15dB at 6–10 GHz and 77K operating temperature. The corresponding return losses are better than 10 dB. At 7GHz, the LNA realized a noise figure of 0.11dB (a noise temperature of 7.7K) and an associated gain of 20dB. The power consumption is 25 mW. The MMIC occupied 1.4mm⨯1.0mm. These performances are the same level as those of LNAs at 10K-20K operating temperature.

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2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

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