{"title":"65nm制程中三模冗余逻辑对记忆元件间距和时钟偏差的软错误率表征","authors":"S. Miryala, T. Hemperek, M. Menouni","doi":"10.22323/1.343.0029","DOIUrl":null,"url":null,"abstract":"Single Event Effects introduce soft errors in ASICs. Design methodologies like Triple Modular Redundancy (TMR) with clock skew insertion, a system level redundancy technique is a common practice by designers to mitigate soft errors. However, the optimal spacing between memory elements in a TMR in 65nm process hasn't been addressed so far. RD53SEU is a mini ASIC development under the framework of the CERN RD53 collaboration to characterize the soft error rates against the separation spacing and clock skew between memory elements in a TMR. This article describes the architecture and design aspects of the various test structures on the RD53SEU test chip.","PeriodicalId":400748,"journal":{"name":"Proceedings of Topical Workshop on Electronics for Particle Physics — PoS(TWEPP2018)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Characterization of Soft Error Rate Against Memory Elements Spacing and Clock Skew in a Logic with Triple Modular Redundancy in a 65nm Process\",\"authors\":\"S. Miryala, T. Hemperek, M. Menouni\",\"doi\":\"10.22323/1.343.0029\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Single Event Effects introduce soft errors in ASICs. Design methodologies like Triple Modular Redundancy (TMR) with clock skew insertion, a system level redundancy technique is a common practice by designers to mitigate soft errors. However, the optimal spacing between memory elements in a TMR in 65nm process hasn't been addressed so far. RD53SEU is a mini ASIC development under the framework of the CERN RD53 collaboration to characterize the soft error rates against the separation spacing and clock skew between memory elements in a TMR. This article describes the architecture and design aspects of the various test structures on the RD53SEU test chip.\",\"PeriodicalId\":400748,\"journal\":{\"name\":\"Proceedings of Topical Workshop on Electronics for Particle Physics — PoS(TWEPP2018)\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Topical Workshop on Electronics for Particle Physics — PoS(TWEPP2018)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.22323/1.343.0029\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Topical Workshop on Electronics for Particle Physics — PoS(TWEPP2018)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.22323/1.343.0029","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characterization of Soft Error Rate Against Memory Elements Spacing and Clock Skew in a Logic with Triple Modular Redundancy in a 65nm Process
Single Event Effects introduce soft errors in ASICs. Design methodologies like Triple Modular Redundancy (TMR) with clock skew insertion, a system level redundancy technique is a common practice by designers to mitigate soft errors. However, the optimal spacing between memory elements in a TMR in 65nm process hasn't been addressed so far. RD53SEU is a mini ASIC development under the framework of the CERN RD53 collaboration to characterize the soft error rates against the separation spacing and clock skew between memory elements in a TMR. This article describes the architecture and design aspects of the various test structures on the RD53SEU test chip.