采用1.8 V, 0.18 /spl mu/m SOI/CMOS技术的10Gbase以太网收发器(LAN PHY)

Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285) Pub Date : 2002-08-07 DOI:10.1109/CICC.2002.1012840

T. Yoshimura, K. Ueda, Jun Takasoh, Yoshiki Wada, T. Oka, H. Kondoh, Osamu Chiba, Yoshihumi Azekawa, M. Ishiwaki

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引用次数: 2

摘要

在本文中，我们提出了一种适用于10gb以太网应用的10gb以太网收发器。10Gbase以太网收发器LSI包含高速接口和完全集成的IEEE 802.3ae兼容逻辑，采用0.18 /spl mu/m SOI/CMOS工艺制造，在1.8 V电源下功耗约为2.9 W。通过集成单片方法和使用先进的CMOS工艺，该10GE收发器实现了低功耗，低成本和紧凑的解决方案，以满足宽带网络应用的指数需求。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 10Gbase Ethernet transceiver (LAN PHY) in a 1.8 V, 0.18 /spl mu/m SOI/CMOS technology

In this paper, we present a 10Gbase Ethernet Transceiver that is suitable for the 10 Gbit Ethernet applications. The 10Gbase Ethernet transceiver LSI, which contains the high-speed interface and the fully integrated IEEE 802.3ae compliant logic, is fabricated in a 0.18 /spl mu/m SOI/CMOS process and dissipates about 2.9 W at 1.8 V supply. By incorporating the monolithic approach and the use of an advanced CMOS process, this 10GE transceiver realizes the low power, low cost and compact solutions for the exponential need of broadband network applications.

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Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)

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