一个非常高的隔离GaAs SPDT开关IC密封在一个超紧凑的塑料封装

H. Uda, T. Hirai, H. Tominaga, K. Nogawa, T. Sawai, S. Higashino, Y. Harada
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引用次数: 3

摘要

首次开发出高隔离开关IC,在1.65 GHz时具有31 dB隔离和0.88 dB插入损耗,封装在6引脚超紧凑塑料封装中,面积约为传统封装的1/4。对该集成电路的超紧凑封装引脚间的隔离特性进行了电磁场仿真分析,并提出了一种考虑塑料成型导致隔离特性恶化的新设计方法。在布局设计中还采用了电磁场仿真的方法,使芯片尺寸最小化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A very high isolation GaAs SPDT switch IC sealed in an ultra compact plastic package
A high-isolation switch IC with 31 dB isolation and 0.88 dB insertion loss at 1.65 GHz, sealed in a 6-pin ultra-compact plastic package having approximately 1/4 the conventional area, was developed for the first time. An electromagnetic-field simulation analysis of the isolation characteristics between the lead pins of the ultra-compact package was used for this IC together with a new design method which takes into account deterioration of the isolation characteristics due to the plastic molding. Electromagnetic-field simulation was also used in the layout design to minimize chip size.
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