双栅Si-CMOS器件的TaSi/sub x/N/sub y/ gate电极的电学特性

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184) Pub Date : 2001-06-12 DOI:10.1109/VLSIT.2001.934940

You-Seok Suh, G. Heuss, H. Zhong, Shin-Nam Hong, V. Misra

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引用次数: 15

摘要

在这项工作中，评估了TaSi/sub x/N/sub y/薄膜在栅极应用中的物理和电学性能。制备了具有不同氮浓度TaSi/sub x/N/sub y/栅极的MOS电容器。研究了TaSi/sub x/N/sub y//SiO/sub 2/ p型Si材料在700/spl℃、900/spl℃和1000/spl℃的氩气中退火温度下的稳定性。当氮含量超过35 at%时，退火温度达到1000/spl℃时，氧化物厚度和栅极电流具有良好的稳定性。结果还表明，TaSi/sub x/N/sub y/的工作函数与NMOS器件兼容。

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Electrical characteristics of TaSi/sub x/N/sub y/ gate electrodes for dual gate Si-CMOS devices

In this work, the physical and electrical properties of TaSi/sub x/N/sub y/ films are evaluated for gate electrode applications. MOS capacitors with TaSi/sub x/N/sub y/ gates of varying N concentrations were fabricated. The stability of TaSi/sub x/N/sub y//SiO/sub 2//p-type Si stacks was studied at annealing temperatures of 700/spl deg/C, 900/spl deg/C, and 1000/spl deg/C in Ar. When the nitrogen content exceeds 35 at%, excellent stability of oxide thickness and gate current is observed for anneals up to 1000/spl deg/C. The results also indicate that the work function of TaSi/sub x/N/sub y/ is compatible with NMOS devices.

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2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184)

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