基于单点登录的soc电磁发射估计方法

S. Jairam, S. M. Stalin, Jean-Yves Oberle, H. Udayakumar
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引用次数: 0

摘要

提出了一种估算soc电磁辐射的方法。该解决方案通过执行基于同步开关输出(SSO)的功率完整性分析来估计SoC外围的电流频谱成分。然后这些成分转化为电偶极子和磁偶极子。偶极子然后由一个定制的场求解器进行分析,计算出场辐射模式。天线模型已通过引线框架为四平面和球栅阵列封装生成。该方法实现了SoC外围分析平台的时序、信号、功率完整性和电磁发射估计的统一。最后,该方法已在各种SoC外围分析场景中进行了验证。分析了一种90nm SOC设计的存储器接口,并将结果与硅测量结果进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An SSO Based Methodology for EM Emission Estimation from SoCs
A methodology to estimate electromagnetic (EM) emission from SoCs is presented. The solution works on estimating current spectral components at the SoC periphery by performing power integrity analysis based on simultaneously switching outputs (SSO). These components are then converted to electric and magnetic dipoles. The dipoles are then analysed by a customised field solver, which computes, the field radiation patterns. Antenna models have been generated through the lead frames for quad flat and ball grid array packages. The proposed approach enables unification of SoC periphery analysis platform for timing, signal, power integrity alongwith EM emission estimation. Finally the approach has been demonstrated on various SoC periphery analysis scenarios. A memory interface of a 90 nm SOC design has been analysed and results have been compared with silicon measurements.
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