J. Foronda, C. Morrison, M. Myronov, J. Halpin, S. Rhead, D. Leadley
{"title":"应变锗量子阱异质结构中高迁移率二维空穴气体的弱反局域行为","authors":"J. Foronda, C. Morrison, M. Myronov, J. Halpin, S. Rhead, D. Leadley","doi":"10.1109/ISTDM.2014.6874644","DOIUrl":null,"url":null,"abstract":"We have measured the low temperature and low field MR of a high mobility Ge 2DHG. The resulting MR curves demonstrate WL-like behavior at temperatures below 2K with WAL-like behavior appearing between 3K and 12K. Evidence of WAL has not been previously observed in Ge. We believe this transition to be the result of a summation of WL and WAL effects in the main conduction channel and parallel conduction channel(s).This is a promising result for Ge as a possible channel for future spin-FETs.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"316 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Weak anti-localization behavior of high mobility 2D hole gas in a strained Ge QW heterostructure\",\"authors\":\"J. Foronda, C. Morrison, M. Myronov, J. Halpin, S. Rhead, D. Leadley\",\"doi\":\"10.1109/ISTDM.2014.6874644\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have measured the low temperature and low field MR of a high mobility Ge 2DHG. The resulting MR curves demonstrate WL-like behavior at temperatures below 2K with WAL-like behavior appearing between 3K and 12K. Evidence of WAL has not been previously observed in Ge. We believe this transition to be the result of a summation of WL and WAL effects in the main conduction channel and parallel conduction channel(s).This is a promising result for Ge as a possible channel for future spin-FETs.\",\"PeriodicalId\":371483,\"journal\":{\"name\":\"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)\",\"volume\":\"316 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISTDM.2014.6874644\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISTDM.2014.6874644","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Weak anti-localization behavior of high mobility 2D hole gas in a strained Ge QW heterostructure
We have measured the low temperature and low field MR of a high mobility Ge 2DHG. The resulting MR curves demonstrate WL-like behavior at temperatures below 2K with WAL-like behavior appearing between 3K and 12K. Evidence of WAL has not been previously observed in Ge. We believe this transition to be the result of a summation of WL and WAL effects in the main conduction channel and parallel conduction channel(s).This is a promising result for Ge as a possible channel for future spin-FETs.
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