使用忆阻器和传输门的位非易失性存储器单元

Patrick W. C. Ho, H. Almurib, T. N. Kumar
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引用次数: 10

摘要

近年来,非易失性记忆作为易失性记忆的替代物得到了广泛的关注。除了无易失性外,忆阻器件还具有开关速度快、能耗低、器件尺寸小等优点。本文提出了一种由两个传输门和一个忆阻器(2TG1M)组成的新型1位存储单元。SPICE模拟比较了所提出的存储单元和传统的易失性1位SRAM单元的每位存储单元的能量需求。仿真结果表明,SRAM存储单元需要73.034 ~ 12.433 nJ才能保留10年的逻辑信息,而所提出的存储单元需要不到1 pJ才能保留10年的逻辑信息。所提出的存储单元还与流行的一晶体管一忆阻器(1T1M)非易失性存储单元进行了仿真,显示开关速度提高了1.5倍。这项工作总结了所提出的2TG1M非易失性存储单元在能量需求方面相对于易失性存储器的优势,以及在开关速度方面相对于非易失性存储器的优势。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
One-bit non-volatile memory cell using memristor and transmission gates
In recent researches, much emphasis has been placed in developing non-volatile memories as candidates for replacement of volatile memories. Apart from non-volatility, memristive devices also have high switching speed, low energy consumption, and small device size. In this article, a novel one-bit memory cell using two transmission gates and one memristor (2TG1M) is proposed. SPICE simulations were performed to compare energy requirements per one-bit memory cell between the proposed memory cell and the conventional volatile one-bit SRAM cell. Simulations show that the SRAM memory cell requires between 73.034 pJ and 12.433 nJ to retain logic information for 10 years, while the proposed memory cell requires less than 1 pJ to hold logic information for up to 10 years. The proposed memory cell is also simulated against the popular one transistor one memristor (1T1M) non-volatile memory cell to show faster switching speed by 1.5 times. This work concludes the advantages of the proposed 2TG1M nonvolatile memory cell against volatile memory in terms of energy requirements, and against non-volatile memory in terms of switching speed.
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