Large-Signal Time Domain Characterization of Microwave Transistors under RF Pulsed Conditions

This paper describes a time domain measurement technique of large-signal RF pulsed waveforms, based on Agilent Nonlinear Network Measurement System (NNMS). A transistor is biased under pulsed conditions and the RF is applied during bias pulses. The paper shows how the time domain RF measurements are acquired during the pulses. Up to 12 harmonic frequencies are taken into account, in order to provide an accurate time domain voltage and current description at both transistor terminals.