{"title":"532 nm Nd:YAG激光从蓝宝石衬底分离独立GaN的拉曼光谱研究","authors":"H. Ho, K. Lo, G. Siu, C. Surya","doi":"10.1109/HKEDM.2002.1029169","DOIUrl":null,"url":null,"abstract":"Gallium nitride (GaN) thin films grown on sapphire substrates were successfully lifted onto silicon wafers using a laser lift-off (LLO) process induced by a 532 nm, Nd:YAG pulsed laser. Although the photon energy (2.33 eV) is much lower than the band gap of hexagonal GaN (3.41 eV), free-carriers absorption can heat up and consequently causes detachment of the GaN film from the sapphire substrate. Raman measurement conducted before and after LLO showed that the surface structure of the lifted GaN changed from hexagonal to a cubic structure.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Raman spectroscopy study on free-standing GaN separated from sapphire substrates by 532 nm Nd:YAG laser lift-off\",\"authors\":\"H. Ho, K. Lo, G. Siu, C. Surya\",\"doi\":\"10.1109/HKEDM.2002.1029169\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Gallium nitride (GaN) thin films grown on sapphire substrates were successfully lifted onto silicon wafers using a laser lift-off (LLO) process induced by a 532 nm, Nd:YAG pulsed laser. Although the photon energy (2.33 eV) is much lower than the band gap of hexagonal GaN (3.41 eV), free-carriers absorption can heat up and consequently causes detachment of the GaN film from the sapphire substrate. Raman measurement conducted before and after LLO showed that the surface structure of the lifted GaN changed from hexagonal to a cubic structure.\",\"PeriodicalId\":154545,\"journal\":{\"name\":\"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-11-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HKEDM.2002.1029169\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.2002.1029169","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Raman spectroscopy study on free-standing GaN separated from sapphire substrates by 532 nm Nd:YAG laser lift-off
Gallium nitride (GaN) thin films grown on sapphire substrates were successfully lifted onto silicon wafers using a laser lift-off (LLO) process induced by a 532 nm, Nd:YAG pulsed laser. Although the photon energy (2.33 eV) is much lower than the band gap of hexagonal GaN (3.41 eV), free-carriers absorption can heat up and consequently causes detachment of the GaN film from the sapphire substrate. Raman measurement conducted before and after LLO showed that the surface structure of the lifted GaN changed from hexagonal to a cubic structure.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
