比较低功耗ram中电阻性缺陷测试的不同解决方案

Nunzio Mirabella, M. Grosso, G. Franchino, S. Rinaudo, I. Deretzis, A. Magna, M. Reorda
{"title":"比较低功耗ram中电阻性缺陷测试的不同解决方案","authors":"Nunzio Mirabella, M. Grosso, G. Franchino, S. Rinaudo, I. Deretzis, A. Magna, M. Reorda","doi":"10.1109/LATS53581.2021.9651760","DOIUrl":null,"url":null,"abstract":"Low-power SRAM architectures are especially sensitive to many types of defects that may occur during manufacturing. Among these, resistive defects can appear. This paper analyzes some types of such defects that may impair the device functionalities in subtle ways, depending on the defect characteristics, and that may not be directly or easily detectable by traditional test methods, such as March algorithms. We analyze different methods to test such defects and discuss them in terms of complexity and test time.","PeriodicalId":404536,"journal":{"name":"2021 IEEE 22nd Latin American Test Symposium (LATS)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Comparing different solutions for testing resistive defects in low-power SRAMs\",\"authors\":\"Nunzio Mirabella, M. Grosso, G. Franchino, S. Rinaudo, I. Deretzis, A. Magna, M. Reorda\",\"doi\":\"10.1109/LATS53581.2021.9651760\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Low-power SRAM architectures are especially sensitive to many types of defects that may occur during manufacturing. Among these, resistive defects can appear. This paper analyzes some types of such defects that may impair the device functionalities in subtle ways, depending on the defect characteristics, and that may not be directly or easily detectable by traditional test methods, such as March algorithms. We analyze different methods to test such defects and discuss them in terms of complexity and test time.\",\"PeriodicalId\":404536,\"journal\":{\"name\":\"2021 IEEE 22nd Latin American Test Symposium (LATS)\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE 22nd Latin American Test Symposium (LATS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LATS53581.2021.9651760\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 22nd Latin American Test Symposium (LATS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LATS53581.2021.9651760","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

低功耗SRAM架构对制造过程中可能出现的许多类型的缺陷特别敏感。其中,可出现电阻性缺陷。本文分析了一些类型的缺陷,这些缺陷可能会以微妙的方式损害设备的功能,这取决于缺陷的特征,并且可能无法直接或容易地被传统的测试方法(如March算法)检测到。我们分析了测试这些缺陷的不同方法,并从复杂性和测试时间的角度对它们进行了讨论。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Comparing different solutions for testing resistive defects in low-power SRAMs
Low-power SRAM architectures are especially sensitive to many types of defects that may occur during manufacturing. Among these, resistive defects can appear. This paper analyzes some types of such defects that may impair the device functionalities in subtle ways, depending on the defect characteristics, and that may not be directly or easily detectable by traditional test methods, such as March algorithms. We analyze different methods to test such defects and discuss them in terms of complexity and test time.
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