David Palomeque-Mangut, Á. Rodríguez-Vázquez, M. Delgado-Restituto
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引用次数: 4
摘要
提出了一种高压(HV)浮动电平移位器，该移位器在保持输入信号摆幅的同时，通过将低电源轨从地移到VSSH来实现数字信号的滑动。该电池基于周期性刷新的电荷泵电路，适用于非高压CMOS工艺。输入信号可以是非周期性的。该电路设计和实现在标准180nm 1.8V/3.3V CMOS节点上，占用0.02 mm2。布局后仿真表明，VSSH电压可以在0.5 V ~ 9.5 V范围内安全工作。电路的延迟响应为1.9 ns，功耗为13.9 μW。
A Wide-Range, High-Voltage, Floating Level Shifter with Charge Refreshing in a Standard 180 nm CMOS Process
A high-voltage (HV) floating level shifter which slides digital signals by varying the low supply rail from ground to VSSH while preserving the input signal swing is proposed. The cell is based on a periodically-refreshed charge pump circuit and it is suitable for non-HV CMOS processes. Input signals can be non-periodic. The circuit has been designed and implemented in a standard 180 nm 1.8V/3.3V CMOS node, occupying 0.02 mm2. Post-layout simulations show that VSSH voltage can safely range from 0.5 V to 9.5 V. The delay response of the circuit is 1.9 ns and it consumes 13.9 μW.
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