具有更广泛安全操作区域的新IGBT结构(SOA)

Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Pub Date : 1994-05-31 DOI:10.1109/ISPSD.1994.583697

N. Thaper, B. J. Baliga

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引用次数: 20

摘要

为了扩大IGBT的正向偏置安全工作区域(FBSOA)，本文提出了一种新的IGBT结构，该结构在相邻单元之间加入了一个浅分流器。n通道IGBT的闭锁极限从700 A/cm/sup 2/增加到1100 A/cm/sup 2/， p通道IGBT的闭锁极限从1200 A/cm/sup 2/增加到2100 A/cm/sup 2/。尽管p通道IGBT的动态雪崩极限没有改善，但n通道IGBT的动态雪崩极限得到了显著改善，使其FBSOA比传统IGBT宽得多。在n通道和p通道IGBT中，分流器的加入导致正向压降(电流密度为200 a /cm/sup 2/)分别从1.7 V增加到2.3 V和-2.3 V增加到-3.9 V。

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A new IGBT structure with a wider safe operating area (SOA)

A new IGBT structure incorporating a shallow diverter between adjacent cells is proposed in this paper with the aim of widening the Forward Bias Safe Operating Area (FBSOA) of the IGBT. The latchup limit of the IGBT increased from 700 A/cm/sup 2/ to 1100 A/cm/sup 2/ in case of the n-channel IGBT and from 1200 A/cm/sup 2/ to 2100 A/cm/sup 2/ for the p-channel IGBT. Although there was a no improvement in the dynamic avalanche limit in the case of the p-channel IGBT, it improved significantly for the n-channel IGBT making its FBSOA much wider than that of the conventional IGBT. The incorporation of the diverter was found to result in an increase in the forward voltage drop (at a current density of 200 A/cm/sup 2/) from 1.7 V to 2.3 V and -2.3 V to -3.9 V for the n- and the p-channel IGBT, respectively.

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Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics

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