Computer-aided extraction of small-signal model parameters of heterojunction bipolar transistors

An approach to parameter extraction of small-signal model of heterojunction bipolar transistors (HBT's) is proposed in the present paper. It is based on S-parameter measurements. Exact closed-form equations are used for the direct extraction of circuit elements. The method is characterized by its simplicity and ease of implementation. The Cadence PSpice simulator and the graphical analyzer Cadence Probe are used to automate the extraction procedure. The parameter extraction of intrinsic elements of the model is realized using macro-definitions in Probe. The corresponding macros in the graphical analyzer Probe are presented realizing the proposed extraction procedure.