精确的器件建模技术,有效的集成电路时序仿真

A. Devgan
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引用次数: 9

摘要

暂态仿真器的精度很大程度上取决于其器件模型,而器件模型评估往往是暂态仿真性能的瓶颈。本文提出了综合建模技术来计算快速评估和精确简化晶体管(FAST)模型的侵略性MOS技术。这些FAST模型准确地捕获了晶体管的静态和动态行为,并使其能够进行有效的瞬态仿真。在时序模拟器AGES中使用FAST模型导致比传统电路模拟器加速1000/spl倍/或更多,电路时序精度几乎没有损失。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Accurate device modeling techniques for efficient timing simulation of integrated circuits
Accuracy of a transient simulator is critically dependent on its device models, and device model evaluation is often a bottleneck in transient simulation performance. This paper presents comprehensive modeling techniques to compute Fast-to-evaluate and Accurate Simplified Transistor (FAST) models for aggressive MOS technologies. These FAST models accurately capture the static and dynamic behavior of the transistor, and lend themselves to efficient transient simulation. Use of FAST models in timing simulator AGES leads to speedups of 1000/spl times/ or more over traditional circuit simulators with little or no loss in circuit timing accuracy.
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