利用交叉耦合后失真对消器对差分CMOS低噪声放大器进行线性化

Tae-Sung Kim, Byung-sung Kim
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引用次数: 22

摘要

提出了一种差分CMOS LNA的后线性化技术。该方法利用一个额外的交叉耦合场效应管对产生三阶互调(IM3)电流来抵消差分放大器的IM3电流,同时最小化噪声系数的退化和避免增益的降低。该技术应用于提高差分CMOS LNA的线性度,使用0.18-mum技术。LNA在2 GHz时实现+10.2 dbm IIP3,增益为13.7 db, NF为1.68 db,从1.8 v电源消耗11.8 ma。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Linearization of differential CMOS low noise amplifier using cross-coupled post distortion canceller
A post-linearization technique for the differential CMOS LNA is presented. The proposed method uses an additional cross-coupled FET pair which generates the 3rd-order inter-modulation (IM3) current to cancel out the IM3 current of the differential amplifier while minimizing the degradation of noise figure and avoiding the gain reduction. This technique is applied to enhance the linearity of the differential CMOS LNA using 0.18-mum technology. The LNA achieved +10.2-dBm IIP3 with 13.7-dB gain and 1.68-dB NF at 2 GHz consuming 11.8-mA from a 1.8-V supply.
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