精密运算放大器中与应力相关的偏置电压偏移

Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93) Pub Date : 1993-06-01 DOI:10.1109/ECTC.1993.346764

S. Gee, T. Doan, K. Gilbert

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引用次数: 9

摘要

在模压DIP封装模具中，由于成型化合物的收缩而产生的附加应力和应力导致在主动器件元件所在的模具表面产生复杂的应力状态。本文总结了在精密运算放大器中减小封装应力对偏置电压漂移影响的实验。检查的变量包括电路位置，低应力模具化合物，硅胶涂层，侧钎焊与模压DIP组装和组装后装饰。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Stress related offset voltage shift in a precision operational amplifier

In molded DIP packaging die attach stresses and stresses due to the contraction of the molding compound lead to a complex state of stress on the die surface where active device elements are located. This paper summarizes experimentation to reduce the effects of packaging stresses upon offset voltage shift in a precision operational amplifier. Variables examined include circuit location, low stress mold compounds, silicone gel coatings, side braze versus molded DIP assembly and post assembly trim.<>

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Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)

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