{"title":"高通流低阈值GaSb-InAs异质结构双材料DG隧道场效应管","authors":"Md. Abdullah-Al-Kaiser, D. Paul, Q. Khosru","doi":"10.1109/R10-HTC.2017.8289006","DOIUrl":null,"url":null,"abstract":"In this paper, a novel high-performance GaSb-InAs heterostructure dual-material double-gate (DM-DG) TFET exhibiting high on-current with low threshold voltage is presented. The on-current is boosted from conventional homostructure DM-DG TFET due to the energy band discontinuity at the source-channel junction. Moreover, the impact of thickness dependent bandgap and electron affinity of GaSb-InAs heterostructure on the threshold voltage, on-current, and on-off ratio is also investigated. Our proposed device provides 191.42 μA/μm on-current (Ion), 48 mV/decade SS, and 0.3 V threshold voltage (Vth) at Vds = 0.5 V for 5 nm channel thickness with 40 nm channel length. The optimization of gate material work-function for the proposed heterostructure in comparison with InAs homostructure DM-DG TFET is also analyzed in our work.","PeriodicalId":411099,"journal":{"name":"2017 IEEE Region 10 Humanitarian Technology Conference (R10-HTC)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"High on-current and low threshold GaSb-InAs heterostructure dual-material DG tunnel-FET\",\"authors\":\"Md. Abdullah-Al-Kaiser, D. Paul, Q. Khosru\",\"doi\":\"10.1109/R10-HTC.2017.8289006\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a novel high-performance GaSb-InAs heterostructure dual-material double-gate (DM-DG) TFET exhibiting high on-current with low threshold voltage is presented. The on-current is boosted from conventional homostructure DM-DG TFET due to the energy band discontinuity at the source-channel junction. Moreover, the impact of thickness dependent bandgap and electron affinity of GaSb-InAs heterostructure on the threshold voltage, on-current, and on-off ratio is also investigated. Our proposed device provides 191.42 μA/μm on-current (Ion), 48 mV/decade SS, and 0.3 V threshold voltage (Vth) at Vds = 0.5 V for 5 nm channel thickness with 40 nm channel length. The optimization of gate material work-function for the proposed heterostructure in comparison with InAs homostructure DM-DG TFET is also analyzed in our work.\",\"PeriodicalId\":411099,\"journal\":{\"name\":\"2017 IEEE Region 10 Humanitarian Technology Conference (R10-HTC)\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Region 10 Humanitarian Technology Conference (R10-HTC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/R10-HTC.2017.8289006\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Region 10 Humanitarian Technology Conference (R10-HTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/R10-HTC.2017.8289006","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High on-current and low threshold GaSb-InAs heterostructure dual-material DG tunnel-FET
In this paper, a novel high-performance GaSb-InAs heterostructure dual-material double-gate (DM-DG) TFET exhibiting high on-current with low threshold voltage is presented. The on-current is boosted from conventional homostructure DM-DG TFET due to the energy band discontinuity at the source-channel junction. Moreover, the impact of thickness dependent bandgap and electron affinity of GaSb-InAs heterostructure on the threshold voltage, on-current, and on-off ratio is also investigated. Our proposed device provides 191.42 μA/μm on-current (Ion), 48 mV/decade SS, and 0.3 V threshold voltage (Vth) at Vds = 0.5 V for 5 nm channel thickness with 40 nm channel length. The optimization of gate material work-function for the proposed heterostructure in comparison with InAs homostructure DM-DG TFET is also analyzed in our work.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
