带有100V GaN场效应管的ISL73033SLHM Dri-GaN功率级的SEE和总剂量结果

2021 IEEE Nuclear and Space Radiation Effects Conference (NSREC) Pub Date : 2021-07-01 DOI:10.1109/NSREC45046.2021.9679332

W. H. Newman, N. V. van Vonno, D. Wackley, L. Pearce, E. Thomson

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引用次数: 0

摘要

本文报道了具有100V增强模式GaN场效应晶体管的单封装辐照强化ISL73033SLHM栅极驱动功率级的单事件性能和低剂量率结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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SEE and Total Dose Results of the ISL73033SLHM Dri-GaN Power Stage with 100V GaN FET

We report the single event performance and low dose rate results of the radiation-hardened ISL73033SLHM gate driver power stage with a 100V enhancement mode GaN FET in single package.

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来源期刊

2021 IEEE Nuclear and Space Radiation Effects Conference (NSREC)

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