高速SiGe hbt可扩展Mextram模型参数提取

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI:10.1109/BIPOL.2004.1365764

H. Wu, S. Mijalkovic, J. Burghartz

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引用次数: 7

摘要

提出了一种对高速SiGe HBTs进行几何缩放的方法。缩放是基于具有不同几何形状和薄片电阻测量数据的单个器件的参数集。可缩放模型的结果已经用CV、DC、Ft和高达40 GHz的S11、S21结果进行了验证。

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Parameters extraction of a scalable Mextram model for high-speed SiGe HBTs

A methodology to perform a geometry scaling of Mextram parameters for high-speed SiGe HBTs has been presented. The scaling is based on the parameter sets of individual devices having different geometries and sheet resistance measurement data. The scaleable model results have been verified with CV, DC, Ft and S11, S21 results up to 40 GHz.

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来源期刊

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting

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