一种高性能的Si on Si多芯片模块技术

T. Rucker, N. Mencinger, V. Murali, K. Regis, R. Shukla, R. Sundahl, B. Siu
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引用次数: 0

摘要

讨论了一种基于硅对硅多芯片模块技术的高性能微处理器和高速缓存核心。该技术具有低互连寄生和低成本的特点。采用该技术构建了一个工作频率超过75 MHz的12片模块,其中包含i486微处理器,缓存控制器和256 K的SRAM缓存。与传统的封装部件方法相比,这代表了40-50%的时钟速率改进。使用控制折叠芯片连接(C4)技术将骰子连接到四层金属和聚酰亚胺硅衬底上。该单元被组装成一个350引脚陶瓷引脚网格阵列(PGA)封装。低介电常数聚酰亚胺和倒装芯片芯片互连工艺最小化RC延迟和电感,并且该模块可以在160 MHz以上工作。该模块可以通过在模具表面上间隔的一系列热凸起来耗散高达20 W的功率,并连接到通过基板的阶梯孔上。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A high performance Si on Si multichip module technology
A high-performance microprocessor and cache core based on a silicon-on-silicon multichip module technology is discussed. The technology was designed to have low interconnect parasitics and low cost. A 12-chip module operating at over 75 MHz using this technology was built incorporating an i486 microprocessor, a cache controller, and 256 K of SRAM cache. This represents a 40-50% clock rate improvement over a conventional packaged part approach. The dice were attached to a four-layer metal and polyimide silicon substrate using controlled collapse chip connection (C4) technology. The unit was assembled into a 350 pin ceramic pin grid array (PGA) package. A low-dielectric-constant polyimide and a flip chip die interconnection process minimized RC delay and inductance, and the module can operate at over 160 MHz. The module can dissipate up to 20 W using an array of thermal bumps spaced over the die surface and attached to staircase vias through the substrate.<>
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