用于VLSI仿真的MOSFET建模-理论与实践

International Series on Advances in Solid State Electronics and Technology Pub Date : 2006-12-01 DOI:10.1142/6157

N. Arora

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引用次数: 191

摘要

半导体与pn结基础理论综述MOS晶体管结构与工作MOS电容阈值电压MOSFET直流模型动态模型热载子效应数据采集与模型参数测量模型参数提取优化方法SPICE二极管与MOSFET模型及其参数统计建模与最坏情况设计参数

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MOSFET Modeling for VLSI Simulation - Theory and Practice

Overview Review of Basic Semiconductor and pn Junction Theory MOS Transistor Structure and Operation MOS Capacitor Threshold Voltage MOSFET DC Model Dynamic Model Modeling Hot-Carrier Effects Data Acquisition and Model Parameter Measurements Model Parameter Extraction Using Optimization Method SPICE Diode and MOSFET Models and Their Parameters Statistical Modeling and Worst-Case Design Parameters.

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来源期刊

International Series on Advances in Solid State Electronics and Technology

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