International Series on Advances in Solid State Electronics and Technology最新文献

Logic Non-Volatile Memory - The NVM Solutions from eMemory 逻辑非易失性存储器-来自内存的NVM解决方案

International Series on Advances in Solid State Electronics and Technology Pub Date : 2014-05-01 DOI: 10.1142/8765

C. Hsu, Yuan-Tai Lin, E. Yang, R. Shen

引用次数: 5

BSIM4 and MOSFET Modeling For IC Simulation 集成电路仿真中的BSIM4和MOSFET建模

International Series on Advances in Solid State Electronics and Technology Pub Date : 2011-12-30 DOI: 10.1142/6158

Weidong Liu, C. Hu

引用次数: 57

Compact Hierarchical Bipolar Transistor Modeling With HiCUM 紧凑层次双极晶体管的HiCUM建模

International Series on Advances in Solid State Electronics and Technology Pub Date : 2010-11-25 DOI: 10.1142/7257

M. Schröter, A. Chakravorty

引用次数: 120

Electromigration in ULSI Interconnections ULSI互连中的电迁移

International Series on Advances in Solid State Electronics and Technology Pub Date : 2010-06-25 DOI: 10.1142/7294

C. Tan

{"title":"Electromigration in ULSI Interconnections","authors":"C. Tan","doi":"10.1142/7294","DOIUrl":"https://doi.org/10.1142/7294","url":null,"abstract":"Abstract The first reported work on electromigration (EM) was presented in 1959, and since then extensive studies on the EM are being conducted theoretically, experimentally and numerically. In this work, the history and the evolution on the studies of EM are presented for both Al and Cu interconnection. Electron wind force was proposed to be the driving force for EM. However, as the interconnect line width shrinks to sub-micrometer level, other driving forces become important and even dominating. As a result, the conventional diffusion path approach for the modeling of EM is inadequate, and the driving force approach is needed. Both approaches are presented in this work. The extensive studies of EM lead to a much better understanding of the physics of EM, and with this understanding, the factors that affect the EM of interconnects, especially at the field operating conditions are identified and presented here. This identification leads to various design and process modifications and inventions in order to face the challenges of high EM reliability for an ever shrinking interconnection. The understanding of EM has also led to a better EM testing methodology in order to accurately assess the EM of an interconnection. Rigorous statistical analysis of EM test data is another key factor for this accurate assessment. In this work, we presented both the wafer level and package EM testing methodologies, and the rigorous data analysis that takes into account of the bimodal distribution of EM test data.","PeriodicalId":256342,"journal":{"name":"International Series on Advances in Solid State Electronics and Technology","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121128364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 121

The Physics and Modeling of Mosfets - Surface-Potential Model HiSIM mosfet -表面电位模型HiSIM的物理和建模

International Series on Advances in Solid State Electronics and Technology Pub Date : 2008-06-03 DOI: 10.1142/6159

M. Miura-Mattausch, H. Mattausch, T. Ezaki

引用次数: 93

MOSFET Modeling for VLSI Simulation - Theory and Practice 用于VLSI仿真的MOSFET建模-理论与实践

International Series on Advances in Solid State Electronics and Technology Pub Date : 2006-12-01 DOI: 10.1142/6157

N. Arora

引用次数: 191