{"title":"一种多值铁电内容可寻址存储器","authors":"A. Sheikholeslami, P. Gulak, T. Hanyu","doi":"10.1109/ISMVL.1996.508339","DOIUrl":null,"url":null,"abstract":"A novel architecture for a multiple-valued ferroelectric content-addressable memory (FCAM) is proposed. An FCAM employs ferroelectric capacitors as storage elements to provide a nonvolatile content-addressable memory. A 2-bit search operation is performed by a simultaneous access to a 4-level polarization, hence reducing the total number of search operations to half. Four FCAM structures are discussed in terms of their speed, area, and implementation feasibility.","PeriodicalId":403347,"journal":{"name":"Proceedings of 26th IEEE International Symposium on Multiple-Valued Logic (ISMVL'96)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"A multiple-valued ferroelectric content-addressable memory\",\"authors\":\"A. Sheikholeslami, P. Gulak, T. Hanyu\",\"doi\":\"10.1109/ISMVL.1996.508339\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel architecture for a multiple-valued ferroelectric content-addressable memory (FCAM) is proposed. An FCAM employs ferroelectric capacitors as storage elements to provide a nonvolatile content-addressable memory. A 2-bit search operation is performed by a simultaneous access to a 4-level polarization, hence reducing the total number of search operations to half. Four FCAM structures are discussed in terms of their speed, area, and implementation feasibility.\",\"PeriodicalId\":403347,\"journal\":{\"name\":\"Proceedings of 26th IEEE International Symposium on Multiple-Valued Logic (ISMVL'96)\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-01-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 26th IEEE International Symposium on Multiple-Valued Logic (ISMVL'96)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISMVL.1996.508339\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 26th IEEE International Symposium on Multiple-Valued Logic (ISMVL'96)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISMVL.1996.508339","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A multiple-valued ferroelectric content-addressable memory
A novel architecture for a multiple-valued ferroelectric content-addressable memory (FCAM) is proposed. An FCAM employs ferroelectric capacitors as storage elements to provide a nonvolatile content-addressable memory. A 2-bit search operation is performed by a simultaneous access to a 4-level polarization, hence reducing the total number of search operations to half. Four FCAM structures are discussed in terms of their speed, area, and implementation feasibility.