基于高电子迁移率晶体管的慢波电控太赫兹调制器

2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2021-11-15 DOI:10.1109/IMWS-AMP53428.2021.9644011

Tao Chen, Yi Ren, H. Hao, J. Ran

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引用次数: 0

摘要

在本文中，我们提出了一个高电子迁移率晶体管(HEMT)集成的超表面，以获得高调制深度。通过控制电网电压对太赫兹波进行调制，获得了96%的调制深度，并伴有明显的群延迟。该调制方法具有潜在的高调制速度，在太赫兹无线通信中具有潜在的应用前景。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An Electrically Controlled Terahertz Modulator with Slow Wave Based on High Electron Mobility Transistor

In this paper, we propose a high electron mobility transistor (HEMT) integrated metasurface to obtain a high modulation depth. The terahertz wave can be modulated by controlling the voltage of the grid, and a modulation depth of 96% is obtained, accompanied by a significant group delay. This modulation method has potential applications in terahertz wireless communications for its potential high modulation speed.

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2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

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