短沟道MOS晶体管电荷和电容的先进紧凑模型

Proceedings. XII Symposium on Integrated Circuits and Systems Design (Cat. No.PR00387) Pub Date : 1999-09-29 DOI:10.1109/SBCCI.1999.802959

O. da Costa Gouveia-Filho, M. C. Schneider, C. Galup-Montoro

{"title":"短沟道MOS晶体管电荷和电容的先进紧凑模型","authors":"O. da Costa Gouveia-Filho, M. C. Schneider, C. Galup-Montoro","doi":"10.1109/SBCCI.1999.802959","DOIUrl":null,"url":null,"abstract":"This paper presents a new compact model for the intrinsic charges and (trans) capacitances of the MOSFET including short-channel effects such as drain induced barrier lowering (DIBL), channel length modulation (CLM) and carrier velocity saturation. Explicit and compact expressions for charges and (trans) capacitances valid in all regimes of operation are presented. Simulations examples that illustrate short-channel effects in charges and (trans) capacitances are shown.","PeriodicalId":342390,"journal":{"name":"Proceedings. XII Symposium on Integrated Circuits and Systems Design (Cat. No.PR00387)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Advanced compact model for the charges and capacitances of short-channel MOS transistors\",\"authors\":\"O. da Costa Gouveia-Filho, M. C. Schneider, C. Galup-Montoro\",\"doi\":\"10.1109/SBCCI.1999.802959\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a new compact model for the intrinsic charges and (trans) capacitances of the MOSFET including short-channel effects such as drain induced barrier lowering (DIBL), channel length modulation (CLM) and carrier velocity saturation. Explicit and compact expressions for charges and (trans) capacitances valid in all regimes of operation are presented. Simulations examples that illustrate short-channel effects in charges and (trans) capacitances are shown.\",\"PeriodicalId\":342390,\"journal\":{\"name\":\"Proceedings. XII Symposium on Integrated Circuits and Systems Design (Cat. No.PR00387)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-09-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. XII Symposium on Integrated Circuits and Systems Design (Cat. No.PR00387)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SBCCI.1999.802959\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. XII Symposium on Integrated Circuits and Systems Design (Cat. No.PR00387)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SBCCI.1999.802959","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文提出了一个新的紧凑的MOSFET本征电荷和(反)电容模型，包括漏极诱导势垒降低(DIBL)、沟道长度调制(CLM)和载流子速度饱和等短沟道效应。给出了在所有运行状态下有效的电荷和(反)电容的显式和紧凑表达式。给出了说明电荷和(反)电容中的短通道效应的模拟示例。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Advanced compact model for the charges and capacitances of short-channel MOS transistors

This paper presents a new compact model for the intrinsic charges and (trans) capacitances of the MOSFET including short-channel effects such as drain induced barrier lowering (DIBL), channel length modulation (CLM) and carrier velocity saturation. Explicit and compact expressions for charges and (trans) capacitances valid in all regimes of operation are presented. Simulations examples that illustrate short-channel effects in charges and (trans) capacitances are shown.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings. XII Symposium on Integrated Circuits and Systems Design (Cat. No.PR00387)

自引率

0.00%

发文量