15 /spl mu/m的GaAs/AlGaAs MQW器件焊接到MOSIS 0.8 /spl mu/m CMOS，用于1gb /s双波束智能像素接收/发送

1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC Pub Date : 1996-02-08 DOI:10.1109/ISSCC.1996.488737

T. K. Woodward, A. Krishnamoorthy, K. Goossen, J. A. Walker, A. Lentine, R. A. Novotny, L. D’asaro, L. Chirovsky, S. Hui, B. Tseng, D. Kossives, D. Dahringer, R. Leibenguth, J. Cunningham, W. Jan, D. Miller

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引用次数: 0

摘要

双波束光中继电路运行速度为1gb /s，功耗为10mw，占用约1100 /spl mu/m/sup / 2/，采用能够为代工级VLSI硅CMOS电路提供数千个光输入和输出的技术实现。该技术通过将GaAs/AlGaAs多量子阱(MQW)调制器和探测器通过倒装芯片焊接连接到VLSI CMOS上，提供了这种能力。总结了其主要特点。

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15 /spl mu/m solder bonding of GaAs/AlGaAs MQW devices to MOSIS 0.8 /spl mu/m CMOS for 1 Gb/s two-beam smart-pixel receiver/transmitter

A two-beam optical repeater circuit operates to 1 Gb/s, consumes 10 mW, occupies about 1100 /spl mu/m/sup 2/, and is realized with a technology capable of providing thousands of optical inputs and outputs to foundry-grade VLSI silicon CMOS circuitry. The technology provides this capability by attaching GaAs/AlGaAs multiple-quantum-well (MQW) modulators and detectors to VLSI CMOS with flip-chip solder bonding. The main unique features are summarized.

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来源期刊

1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC

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