{"title":"用于90nm CMOS OFDM WLAN极性发射机的数字包络调制器","authors":"P. van Zeijl, M. Collados","doi":"10.1109/VDAT.2007.373242","DOIUrl":null,"url":null,"abstract":"A digital envelope modulator for an OFDM WLAN polar transmitter has been designed in 90 nm digital CMOS process for the 802.11 a/b/g standards. The digital modulator reaches an output power of -5 dBm for 54 Mbit/s using 64 QAM and fulfilling EVM specifications and in-band spectral mask requirements using 12.7 mW from a 1.2 V supply. When the digital modulator is combined with an off-chip PA, the output power increases to 20.4 dBm, while still fulfilling EVM specifications and in-band spectral mask requirements.","PeriodicalId":137915,"journal":{"name":"2007 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"A Digital Envelope Modulator for an OFDM WLAN Polar Transmitter in 90 nm CMOS\",\"authors\":\"P. van Zeijl, M. Collados\",\"doi\":\"10.1109/VDAT.2007.373242\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A digital envelope modulator for an OFDM WLAN polar transmitter has been designed in 90 nm digital CMOS process for the 802.11 a/b/g standards. The digital modulator reaches an output power of -5 dBm for 54 Mbit/s using 64 QAM and fulfilling EVM specifications and in-band spectral mask requirements using 12.7 mW from a 1.2 V supply. When the digital modulator is combined with an off-chip PA, the output power increases to 20.4 dBm, while still fulfilling EVM specifications and in-band spectral mask requirements.\",\"PeriodicalId\":137915,\"journal\":{\"name\":\"2007 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-04-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VDAT.2007.373242\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VDAT.2007.373242","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Digital Envelope Modulator for an OFDM WLAN Polar Transmitter in 90 nm CMOS
A digital envelope modulator for an OFDM WLAN polar transmitter has been designed in 90 nm digital CMOS process for the 802.11 a/b/g standards. The digital modulator reaches an output power of -5 dBm for 54 Mbit/s using 64 QAM and fulfilling EVM specifications and in-band spectral mask requirements using 12.7 mW from a 1.2 V supply. When the digital modulator is combined with an off-chip PA, the output power increases to 20.4 dBm, while still fulfilling EVM specifications and in-band spectral mask requirements.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
