片上系统接收机级的CMOS LNA设计

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI:10.1109/SMIC.2004.1398195

Ali Tell, Murat Askar

{"title":"片上系统接收机级的CMOS LNA设计","authors":"Ali Tell, Murat Askar","doi":"10.1109/SMIC.2004.1398195","DOIUrl":null,"url":null,"abstract":"Narrowband single-ended inductive source degenerated low noise amplifiers (LNAs) for \"system-on-chip\" receiver stages have been designed, simulated and compared using the Mietec CMOS 0.7 /spl mu/m process and the Cadence/BSIM3v3 tool with active or L-biased DC-bias circuitries. Since there is an intention to use LNAs for GSM and S-band low earth orbit (LEO) space applications, the operating frequencies have been chosen as 900 MHz, 2025 MHz and 2210 MHz.","PeriodicalId":288561,"journal":{"name":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"CMOS LNA design for system-on-chip receiver stages\",\"authors\":\"Ali Tell, Murat Askar\",\"doi\":\"10.1109/SMIC.2004.1398195\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Narrowband single-ended inductive source degenerated low noise amplifiers (LNAs) for \\\"system-on-chip\\\" receiver stages have been designed, simulated and compared using the Mietec CMOS 0.7 /spl mu/m process and the Cadence/BSIM3v3 tool with active or L-biased DC-bias circuitries. Since there is an intention to use LNAs for GSM and S-band low earth orbit (LEO) space applications, the operating frequencies have been chosen as 900 MHz, 2025 MHz and 2210 MHz.\",\"PeriodicalId\":288561,\"journal\":{\"name\":\"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMIC.2004.1398195\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2004.1398195","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

采用Mietec CMOS 0.7 /spl mu/m工艺和Cadence/BSIM3v3工具设计、仿真和比较了用于“片上系统”接收器级的窄带单端电感源退化低噪声放大器(LNAs)，并采用有源或l偏置直流偏置电路。由于有意将lna用于GSM和s波段低地球轨道(LEO)空间应用，因此选择了900 MHz、2025 MHz和2210 MHz的工作频率。

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CMOS LNA design for system-on-chip receiver stages

Narrowband single-ended inductive source degenerated low noise amplifiers (LNAs) for "system-on-chip" receiver stages have been designed, simulated and compared using the Mietec CMOS 0.7 /spl mu/m process and the Cadence/BSIM3v3 tool with active or L-biased DC-bias circuitries. Since there is an intention to use LNAs for GSM and S-band low earth orbit (LEO) space applications, the operating frequencies have been chosen as 900 MHz, 2025 MHz and 2210 MHz.

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来源期刊

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.

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