直径和锗含量变化对Si1−xGex p沟道栅全能纳米线晶体管性能的影响

2017 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2017-06-01 DOI:10.23919/SNW.2017.8242285

Xianle Zhang, Xiaoyan Liu, L. Yin, G. Du

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引用次数: 0

摘要

在这项工作中，研究了纳米线直径(Dnw)和Ge含量(%)对Si1−xGex栅极-全能纳米线p沟道场效应管(GAA pNWTs)性能的影响。模拟了Dnw变化、Ge含量变化以及随机掺杂剂波动(RDF)、栅极边缘粗糙度(GER)和金属栅极粒度(MGG)等随机过程变化对SiGe GAA pNWTs的影响。

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Impacts of diameter and Ge content variation on the performance of Si1−xGex p-channel gate-all-around nanowire transistors

In this work, the impacts of both nanowire diameter (Dnw) and Ge content (%) on the performance of Si1−xGex Gate-All-Around nanowire p-channel FETs (GAA pNWTs) are investigated. The variations in SiGe GAA pNWTs induced by Dnw variation, Ge content variation and some stochastic process variations including of random dopants fluctuation (RDF), gate edge roughness (GER), and metal gate granularity (MGG) are also simulated.

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2017 Silicon Nanoelectronics Workshop (SNW)

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