Vladimir V. Krivolapchuk, M. Mezdrogina, S. D. Raevskii, A. Skvortsov, S. Yusupova
{"title":"GaN:Er3+晶体的吸收光谱","authors":"Vladimir V. Krivolapchuk, M. Mezdrogina, S. D. Raevskii, A. Skvortsov, S. Yusupova","doi":"10.1117/12.475320","DOIUrl":null,"url":null,"abstract":"We have studied the f-f absorption spectra of Er3+ in GaN crystal grown by gas phase epitaxy in chlorine system. A detailed study of 4I15/2 yields 2H11/2 transitions in the region 19000-19260 cm-1, has been carried out at 293, 77 and 2K. At T equals 2K the 4I15/2 yields 2H11/2 spectrum contains 6 lines in accordance with theoretical predictions for Er3+ in noncubic crystal field. The levels of 2H11/2 multiplet are situated at: 19041, 19049, 19074, 19108, 19191, 19246 cm-1. The number of lines observed at T equals 2K and its small width indicate that in our samples Er3+ ions occupy predominantly a unique position in GaN lattice. Most probably, Er3+ substitutes Ga atoms or enters in interstitial position.","PeriodicalId":312884,"journal":{"name":"Feofilov Symposium on Spectropscopy of Crystals Activated by Rare-Earth and Transition Metal Ions","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Absorption spectra of GaN:Er3+ crystals\",\"authors\":\"Vladimir V. Krivolapchuk, M. Mezdrogina, S. D. Raevskii, A. Skvortsov, S. Yusupova\",\"doi\":\"10.1117/12.475320\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have studied the f-f absorption spectra of Er3+ in GaN crystal grown by gas phase epitaxy in chlorine system. A detailed study of 4I15/2 yields 2H11/2 transitions in the region 19000-19260 cm-1, has been carried out at 293, 77 and 2K. At T equals 2K the 4I15/2 yields 2H11/2 spectrum contains 6 lines in accordance with theoretical predictions for Er3+ in noncubic crystal field. The levels of 2H11/2 multiplet are situated at: 19041, 19049, 19074, 19108, 19191, 19246 cm-1. The number of lines observed at T equals 2K and its small width indicate that in our samples Er3+ ions occupy predominantly a unique position in GaN lattice. Most probably, Er3+ substitutes Ga atoms or enters in interstitial position.\",\"PeriodicalId\":312884,\"journal\":{\"name\":\"Feofilov Symposium on Spectropscopy of Crystals Activated by Rare-Earth and Transition Metal Ions\",\"volume\":\"57 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-07-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Feofilov Symposium on Spectropscopy of Crystals Activated by Rare-Earth and Transition Metal Ions\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.475320\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Feofilov Symposium on Spectropscopy of Crystals Activated by Rare-Earth and Transition Metal Ions","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.475320","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We have studied the f-f absorption spectra of Er3+ in GaN crystal grown by gas phase epitaxy in chlorine system. A detailed study of 4I15/2 yields 2H11/2 transitions in the region 19000-19260 cm-1, has been carried out at 293, 77 and 2K. At T equals 2K the 4I15/2 yields 2H11/2 spectrum contains 6 lines in accordance with theoretical predictions for Er3+ in noncubic crystal field. The levels of 2H11/2 multiplet are situated at: 19041, 19049, 19074, 19108, 19191, 19246 cm-1. The number of lines observed at T equals 2K and its small width indicate that in our samples Er3+ ions occupy predominantly a unique position in GaN lattice. Most probably, Er3+ substitutes Ga atoms or enters in interstitial position.