GaN:Er3+晶体的吸收光谱

Vladimir V. Krivolapchuk, M. Mezdrogina, S. D. Raevskii, A. Skvortsov, S. Yusupova
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引用次数: 0

摘要

研究了氯系气相外延生长GaN晶体中Er3+的f-f吸收光谱。对19000 ~ 19260 cm-1区域的4I15/2产率2H11/2跃迁进行了详细的研究。在T = 2K时,4I15/2得到的2H11/2光谱包含6条谱线,符合Er3+在非立方晶体场中的理论预测。2H11/2多组分的水平位于:19041、19049、19074、19108、19191、19246 cm-1。在T = 2K处观察到的谱线数目和它的小宽度表明,在我们的样品中Er3+离子在GaN晶格中主要占据一个独特的位置。最有可能的是,Er3+取代Ga原子或进入间隙位置。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Absorption spectra of GaN:Er3+ crystals
We have studied the f-f absorption spectra of Er3+ in GaN crystal grown by gas phase epitaxy in chlorine system. A detailed study of 4I15/2 yields 2H11/2 transitions in the region 19000-19260 cm-1, has been carried out at 293, 77 and 2K. At T equals 2K the 4I15/2 yields 2H11/2 spectrum contains 6 lines in accordance with theoretical predictions for Er3+ in noncubic crystal field. The levels of 2H11/2 multiplet are situated at: 19041, 19049, 19074, 19108, 19191, 19246 cm-1. The number of lines observed at T equals 2K and its small width indicate that in our samples Er3+ ions occupy predominantly a unique position in GaN lattice. Most probably, Er3+ substitutes Ga atoms or enters in interstitial position.
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