{"title":"在SiO2/Si界面上铯偏析形成反向源/漏扩展的n- mosfet","authors":"K. Kimoto, T. Tada, T. Kanayama","doi":"10.1109/ESSDERC.2008.4681767","DOIUrl":null,"url":null,"abstract":"We fabricated a novel type MOSFET with inversion layer source/drain extensions formed by Cs implantation and segregation at SiO2/Si interfaces beside the gate and demonstrate that it has significant immunity to short channel effect, gate induced drain leakage, and transient enhanced diffusion of channel boron impurities, compared to conventional MOSFETs. The stability of Cs in the device is also confirmed by bias-temperature-stress measurements.","PeriodicalId":121088,"journal":{"name":"ESSDERC 2008 - 38th European Solid-State Device Research Conference","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"N-MOSFETs with inversion-layer source/drain extensions formed by cesium segregation at SiO2/Si interfaces\",\"authors\":\"K. Kimoto, T. Tada, T. Kanayama\",\"doi\":\"10.1109/ESSDERC.2008.4681767\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We fabricated a novel type MOSFET with inversion layer source/drain extensions formed by Cs implantation and segregation at SiO2/Si interfaces beside the gate and demonstrate that it has significant immunity to short channel effect, gate induced drain leakage, and transient enhanced diffusion of channel boron impurities, compared to conventional MOSFETs. The stability of Cs in the device is also confirmed by bias-temperature-stress measurements.\",\"PeriodicalId\":121088,\"journal\":{\"name\":\"ESSDERC 2008 - 38th European Solid-State Device Research Conference\",\"volume\":\"52 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-11-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSDERC 2008 - 38th European Solid-State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2008.4681767\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSDERC 2008 - 38th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2008.4681767","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
N-MOSFETs with inversion-layer source/drain extensions formed by cesium segregation at SiO2/Si interfaces
We fabricated a novel type MOSFET with inversion layer source/drain extensions formed by Cs implantation and segregation at SiO2/Si interfaces beside the gate and demonstrate that it has significant immunity to short channel effect, gate induced drain leakage, and transient enhanced diffusion of channel boron impurities, compared to conventional MOSFETs. The stability of Cs in the device is also confirmed by bias-temperature-stress measurements.
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