{"title":"ESD抗扰设计的现象学方法","authors":"W. Rhoades","doi":"10.1109/ISEMC.1994.385660","DOIUrl":null,"url":null,"abstract":"It is verified that, a 330 ohm/l50 pF ESD contact discharge simulator met the IEC 801-2 requirements in 150 ps and 350 ps rise time test setups. This same ESD simulator using air discharge in a 150 ps test setup, with a charge voltage, between 2 and 8 kV had a peak current 2 times higher and a rise time of 1/6 of the contact values. A five step design order is presented to achieve cost effective ESD equipment immunity design. The key consideration for obtaining this design is the understanding of the common-mode (CM) ESD current path. A number of examples illustrate this key from the simple reset hardening to the advance concept of ESD differential termination of the converted transient and using a CM inductor to improve the CM rejection in the receptor.<<ETX>>","PeriodicalId":154914,"journal":{"name":"Proceedings of IEEE Symposium on Electromagnetic Compatibility","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Phenomenological approach for ESD immunity design\",\"authors\":\"W. Rhoades\",\"doi\":\"10.1109/ISEMC.1994.385660\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"It is verified that, a 330 ohm/l50 pF ESD contact discharge simulator met the IEC 801-2 requirements in 150 ps and 350 ps rise time test setups. This same ESD simulator using air discharge in a 150 ps test setup, with a charge voltage, between 2 and 8 kV had a peak current 2 times higher and a rise time of 1/6 of the contact values. A five step design order is presented to achieve cost effective ESD equipment immunity design. The key consideration for obtaining this design is the understanding of the common-mode (CM) ESD current path. A number of examples illustrate this key from the simple reset hardening to the advance concept of ESD differential termination of the converted transient and using a CM inductor to improve the CM rejection in the receptor.<<ETX>>\",\"PeriodicalId\":154914,\"journal\":{\"name\":\"Proceedings of IEEE Symposium on Electromagnetic Compatibility\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-08-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE Symposium on Electromagnetic Compatibility\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISEMC.1994.385660\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE Symposium on Electromagnetic Compatibility","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISEMC.1994.385660","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
It is verified that, a 330 ohm/l50 pF ESD contact discharge simulator met the IEC 801-2 requirements in 150 ps and 350 ps rise time test setups. This same ESD simulator using air discharge in a 150 ps test setup, with a charge voltage, between 2 and 8 kV had a peak current 2 times higher and a rise time of 1/6 of the contact values. A five step design order is presented to achieve cost effective ESD equipment immunity design. The key consideration for obtaining this design is the understanding of the common-mode (CM) ESD current path. A number of examples illustrate this key from the simple reset hardening to the advance concept of ESD differential termination of the converted transient and using a CM inductor to improve the CM rejection in the receptor.<>