基于外延GaAs:S, Cr层的γ-量子探测器

2011 International Siberian Conference on Control and Communications (SIBCON) Pub Date : 2011-11-10 DOI:10.1109/SIBCON.2011.6072646

M. D. Vilisova, V. P. Germogenov, I. Ponomarev, A. Tyazhev

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引用次数: 0

摘要

本文介绍了基于砷化镓外延层、经Cr补偿的探测器结构的研究结果。结果表明，电场在结构有源区的直线分布对γ-量子的振幅谱有影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Detectors of γ-Quantum based on epitaxial GaAs:S, Cr layers

The results of study detector structures based on epitaxial layers of GaAs, compensated by Cr, are presented. It is shown that distribution of electric field straight in active region of the structures affected on it amplitude spectrums of γ-quantum.

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2011 International Siberian Conference on Control and Communications (SIBCON)

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