用于交流矩阵变换器的1200V级反向阻断IGBT (RB-IGBT)

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI:10.1109/WCT.2004.239841

H. Takahashi, M. Kaneda, T. Minato

{"title":"用于交流矩阵变换器的1200V级反向阻断IGBT (RB-IGBT)","authors":"H. Takahashi, M. Kaneda, T. Minato","doi":"10.1109/WCT.2004.239841","DOIUrl":null,"url":null,"abstract":"This paper presents a novel 1200 V RB-IGBT for an AC matrix converter. The 1200 V RB-IGBT is made by a deep diffusion isolation process and thin wafer process technology. Our fabricated RB-IGBT achieved more than 1200 V reverse blocking capability and the same forward voltage drop Vce(sat) and turn-off energy loss Eoff characteristics as our previous punch through type (PT-type) third generation IGBT. Therefore, it is possible to reduce the total loss in the AC matrix converter operation compared with the conventional IGBT and diode coupling.","PeriodicalId":303825,"journal":{"name":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"30","resultStr":"{\"title\":\"1200V class reverse blocking IGBT (RB-IGBT) for AC matrix converter\",\"authors\":\"H. Takahashi, M. Kaneda, T. Minato\",\"doi\":\"10.1109/WCT.2004.239841\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a novel 1200 V RB-IGBT for an AC matrix converter. The 1200 V RB-IGBT is made by a deep diffusion isolation process and thin wafer process technology. Our fabricated RB-IGBT achieved more than 1200 V reverse blocking capability and the same forward voltage drop Vce(sat) and turn-off energy loss Eoff characteristics as our previous punch through type (PT-type) third generation IGBT. Therefore, it is possible to reduce the total loss in the AC matrix converter operation compared with the conventional IGBT and diode coupling.\",\"PeriodicalId\":303825,\"journal\":{\"name\":\"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-05-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"30\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WCT.2004.239841\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WCT.2004.239841","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 30

摘要

本文提出了一种新型的用于交流矩阵变换器的1200v RB-IGBT。1200v RB-IGBT采用深扩散隔离工艺和薄晶片工艺制造而成。我们制造的RB-IGBT实现了超过1200 V的反向阻断能力，并且与我们之前的穿孔式(pt型)第三代IGBT具有相同的正向压降Vce(sat)和关断能量损失Eoff特性。因此，与传统的IGBT和二极管耦合相比，有可能降低交流矩阵变换器工作中的总损耗。

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1200V class reverse blocking IGBT (RB-IGBT) for AC matrix converter

This paper presents a novel 1200 V RB-IGBT for an AC matrix converter. The 1200 V RB-IGBT is made by a deep diffusion isolation process and thin wafer process technology. Our fabricated RB-IGBT achieved more than 1200 V reverse blocking capability and the same forward voltage drop Vce(sat) and turn-off energy loss Eoff characteristics as our previous punch through type (PT-type) third generation IGBT. Therefore, it is possible to reduce the total loss in the AC matrix converter operation compared with the conventional IGBT and diode coupling.

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2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

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