自注入硅的离子通道和拉曼散射研究

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI:10.1109/COMMAD.2002.1237282

B. C. Johnson, J. McCallum

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引用次数: 0

摘要

利用离子通道和拉曼光谱技术研究了245 keV和5.5 MeV Si/sup +/注入Si(100)所产生的离子束损伤。在这项工作中采用的两种技术进行了比较，并显示出与拉曼散射互补，对低损伤浓度更敏感。并对空间相关模型进行了讨论。

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Ion channelling and Raman scattering study of self-implanted silicon

Ion channeling and Raman spectroscopy techniques were used to investigate ion-beam damage created by implantation of 245 keV and 5.5 MeV Si/sup +/ into Si(100). The two techniques employed in this work are compared and are shown to be complimentary with Raman scattering being more sensitive to low damage concentrations. The spatial correlation model is also discussed.

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2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)

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