J. Micout, B. Sklénard, P. Batude, R. Berthelon, Q. Rafhay, J. Lacord, B. Mathieu, L. Pasini, Z. Saghi, V. Delaye, L. Brunet, C. Fenouillet-Béranger, S. Joblot, F. Mazen, V. Mazzocchi, J. Colinge, G. Ghibaudo, M. Vinet
{"title":"面向500°C的SPER激活设备，用于3D顺序集成","authors":"J. Micout, B. Sklénard, P. Batude, R. Berthelon, Q. Rafhay, J. Lacord, B. Mathieu, L. Pasini, Z. Saghi, V. Delaye, L. Brunet, C. Fenouillet-Béranger, S. Joblot, F. Mazen, V. Mazzocchi, J. Colinge, G. Ghibaudo, M. Vinet","doi":"10.1109/S3S.2017.8309220","DOIUrl":null,"url":null,"abstract":"This work investigates the possibility to reduce the Solid Phase Epitaxy Regrowth (SPER) temperature for dopant activation needed in 3D sequential integration. The electrical results obtained on 28nm FDSOI devices show that 500°C SPER can yield similar performance to that of 600°C SPER and 1050°C spike anneal. This paper highlights the advantages of using a <100>-oriented channel and tilted implantation to successfully reduce the SPER thermal budget. It also confirms that the channel can be used as a seed for the recrystallization. The analysis takes into account the SPER rate dependence on temperature, crystalline orientation, dopant type and dopant concentration.","PeriodicalId":333587,"journal":{"name":"2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Towards 500°C SPER activated devices for 3D sequential integration\",\"authors\":\"J. Micout, B. Sklénard, P. Batude, R. Berthelon, Q. Rafhay, J. Lacord, B. Mathieu, L. Pasini, Z. Saghi, V. Delaye, L. Brunet, C. Fenouillet-Béranger, S. Joblot, F. Mazen, V. Mazzocchi, J. Colinge, G. Ghibaudo, M. Vinet\",\"doi\":\"10.1109/S3S.2017.8309220\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work investigates the possibility to reduce the Solid Phase Epitaxy Regrowth (SPER) temperature for dopant activation needed in 3D sequential integration. The electrical results obtained on 28nm FDSOI devices show that 500°C SPER can yield similar performance to that of 600°C SPER and 1050°C spike anneal. This paper highlights the advantages of using a <100>-oriented channel and tilted implantation to successfully reduce the SPER thermal budget. It also confirms that the channel can be used as a seed for the recrystallization. The analysis takes into account the SPER rate dependence on temperature, crystalline orientation, dopant type and dopant concentration.\",\"PeriodicalId\":333587,\"journal\":{\"name\":\"2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/S3S.2017.8309220\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/S3S.2017.8309220","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Towards 500°C SPER activated devices for 3D sequential integration
This work investigates the possibility to reduce the Solid Phase Epitaxy Regrowth (SPER) temperature for dopant activation needed in 3D sequential integration. The electrical results obtained on 28nm FDSOI devices show that 500°C SPER can yield similar performance to that of 600°C SPER and 1050°C spike anneal. This paper highlights the advantages of using a <100>-oriented channel and tilted implantation to successfully reduce the SPER thermal budget. It also confirms that the channel can be used as a seed for the recrystallization. The analysis takes into account the SPER rate dependence on temperature, crystalline orientation, dopant type and dopant concentration.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
