嵌入式闪存-技术评估与未来

1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453) Pub Date : 1999-06-08 DOI:10.1109/VTSA.1999.786030

K. Yoshikawa

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引用次数: 7

摘要

虽然嵌入式闪存技术应该是下一个十年片上系统的关键，但目前逻辑CMOS器件的大规模扩展增加了成本效益器件实现的难度。嵌入式闪存器件的各种方法和需求将从器件物理、工艺集成和可靠性等广泛的角度进行讨论。未来理想的细胞结构也将被讨论。

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Embedded flash memories-technology assessment and future

While embedded flash technologies should be the key for the next decade system-on-a-chip, current aggressive scaling of logic CMOS devices increases the difficulty for the cost effective device realization. Various approaches and requirements for embedded flash devices will be discussed from broad viewpoints, such as device physics, process integration and reliability. Future ideal cell structure will also be addressed.

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来源期刊

1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453)

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