过程可变感知主动重构技术缓解纳米SRAM寿命老化效应

P. Pouyan, E. Amat, A. Rubio
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引用次数: 25

摘要

工艺变化和器件老化对纳米集成电路的可靠性和性能有重要影响。主动重构是一种新兴的延长嵌入式SRAM存储器寿命的技术。本文介绍了一个新的版本,通过考虑过程可变性对内存组件的影响,修改和增强了该方法的优点。我们的研究结果表明,与现有的主动重构技术相比,SRAM寿命增加了30%到45%,比非主动重构技术提高了1.7到10倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Process variability-aware proactive reconfiguration technique for mitigating aging effects in nano scale SRAM lifetime
Process variations and device aging have a significant impact on the reliability and performance of nano scale integrated circuits. Proactive reconfiguration is an emerging technique to extend the lifetime of embedded SRAM memories. This work introduces a novel version that modifies and enhances the advantages of this method by considering the process variability impact on the memory components. Our results show between 30% and 45% SRAM lifetime increases over the existing proactive reconfiguration technique and between 1.7X and ~10X improvement over the non-proactive reconfiguration.
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