{"title":"过程可变感知主动重构技术缓解纳米SRAM寿命老化效应","authors":"P. Pouyan, E. Amat, A. Rubio","doi":"10.1109/VTS.2012.6231060","DOIUrl":null,"url":null,"abstract":"Process variations and device aging have a significant impact on the reliability and performance of nano scale integrated circuits. Proactive reconfiguration is an emerging technique to extend the lifetime of embedded SRAM memories. This work introduces a novel version that modifies and enhances the advantages of this method by considering the process variability impact on the memory components. Our results show between 30% and 45% SRAM lifetime increases over the existing proactive reconfiguration technique and between 1.7X and ~10X improvement over the non-proactive reconfiguration.","PeriodicalId":169611,"journal":{"name":"2012 IEEE 30th VLSI Test Symposium (VTS)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"25","resultStr":"{\"title\":\"Process variability-aware proactive reconfiguration technique for mitigating aging effects in nano scale SRAM lifetime\",\"authors\":\"P. Pouyan, E. Amat, A. Rubio\",\"doi\":\"10.1109/VTS.2012.6231060\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Process variations and device aging have a significant impact on the reliability and performance of nano scale integrated circuits. Proactive reconfiguration is an emerging technique to extend the lifetime of embedded SRAM memories. This work introduces a novel version that modifies and enhances the advantages of this method by considering the process variability impact on the memory components. Our results show between 30% and 45% SRAM lifetime increases over the existing proactive reconfiguration technique and between 1.7X and ~10X improvement over the non-proactive reconfiguration.\",\"PeriodicalId\":169611,\"journal\":{\"name\":\"2012 IEEE 30th VLSI Test Symposium (VTS)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"25\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE 30th VLSI Test Symposium (VTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VTS.2012.6231060\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 30th VLSI Test Symposium (VTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTS.2012.6231060","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Process variability-aware proactive reconfiguration technique for mitigating aging effects in nano scale SRAM lifetime
Process variations and device aging have a significant impact on the reliability and performance of nano scale integrated circuits. Proactive reconfiguration is an emerging technique to extend the lifetime of embedded SRAM memories. This work introduces a novel version that modifies and enhances the advantages of this method by considering the process variability impact on the memory components. Our results show between 30% and 45% SRAM lifetime increases over the existing proactive reconfiguration technique and between 1.7X and ~10X improvement over the non-proactive reconfiguration.