{"title":"100瓦l波段功率放大器","authors":"Tohid Naeimi, A. Ahmadi","doi":"10.1109/IRANIANCEE.2017.7985406","DOIUrl":null,"url":null,"abstract":"In this paper, a 1100–1350 MHz power amplifier is introduced. For the realization of the RF power amplifier an LDMOS transistor is used. The amplifier delivers 100W power to a 50 ohm load with 50% efficiency. The transducer power gain of the amplifier is has 16dB at 100W output power. A mixed lumped element and transmission line matching circuit is used to implement matching network. The simulations are performed by the nonlinear model of the transistor, which is provided by the manufacturer. Finally the results of simulations are compared with the measurements.","PeriodicalId":161929,"journal":{"name":"2017 Iranian Conference on Electrical Engineering (ICEE)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A 100 watts L-band power amplifier\",\"authors\":\"Tohid Naeimi, A. Ahmadi\",\"doi\":\"10.1109/IRANIANCEE.2017.7985406\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a 1100–1350 MHz power amplifier is introduced. For the realization of the RF power amplifier an LDMOS transistor is used. The amplifier delivers 100W power to a 50 ohm load with 50% efficiency. The transducer power gain of the amplifier is has 16dB at 100W output power. A mixed lumped element and transmission line matching circuit is used to implement matching network. The simulations are performed by the nonlinear model of the transistor, which is provided by the manufacturer. Finally the results of simulations are compared with the measurements.\",\"PeriodicalId\":161929,\"journal\":{\"name\":\"2017 Iranian Conference on Electrical Engineering (ICEE)\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Iranian Conference on Electrical Engineering (ICEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRANIANCEE.2017.7985406\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Iranian Conference on Electrical Engineering (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRANIANCEE.2017.7985406","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this paper, a 1100–1350 MHz power amplifier is introduced. For the realization of the RF power amplifier an LDMOS transistor is used. The amplifier delivers 100W power to a 50 ohm load with 50% efficiency. The transducer power gain of the amplifier is has 16dB at 100W output power. A mixed lumped element and transmission line matching circuit is used to implement matching network. The simulations are performed by the nonlinear model of the transistor, which is provided by the manufacturer. Finally the results of simulations are compared with the measurements.
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