利用Sentaurus TCAD软件设计和表征60nm p阱MOSFET

2010 2nd International Conference on Electronic Computer Technology Pub Date : 2010-06-07 DOI:10.1109/ICECTECH.2010.5479966

Marlia binti Morsin, Mohd Khairul Amriey

{"title":"利用Sentaurus TCAD软件设计和表征60nm p阱MOSFET","authors":"Marlia binti Morsin, Mohd Khairul Amriey","doi":"10.1109/ICECTECH.2010.5479966","DOIUrl":null,"url":null,"abstract":"A 60nm p-well MOSFET device was designed and characterized based on 90nm recipe using Sentaurus TCAD Software. In this project, there are two major simulations done using Sentaurus Process and Sentaurus Device. Sentaurus Process is a simulator for semiconductor manufacturing process. While Sentaurus Device work as a device simulator to obtain electrical characteristic. The simulations results are viewed in two dimensions (2D) using INSPECT and TECPLOT SV tools. The threshold voltages (Vth) for NMOS and PMOS of 60nm are 0.210889V and −0.182V, the drain saturation current (Idsat) are 9.575e–04A and 1.439e–03A with the leakage current (Ioff) are 2.623e–05A and 2.601e–07A. The simulation results are almost identical with the theoretical.","PeriodicalId":178300,"journal":{"name":"2010 2nd International Conference on Electronic Computer Technology","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Designing and characterization of 60nm p-well MOSFET using Sentaurus TCAD Software\",\"authors\":\"Marlia binti Morsin, Mohd Khairul Amriey\",\"doi\":\"10.1109/ICECTECH.2010.5479966\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 60nm p-well MOSFET device was designed and characterized based on 90nm recipe using Sentaurus TCAD Software. In this project, there are two major simulations done using Sentaurus Process and Sentaurus Device. Sentaurus Process is a simulator for semiconductor manufacturing process. While Sentaurus Device work as a device simulator to obtain electrical characteristic. The simulations results are viewed in two dimensions (2D) using INSPECT and TECPLOT SV tools. The threshold voltages (Vth) for NMOS and PMOS of 60nm are 0.210889V and −0.182V, the drain saturation current (Idsat) are 9.575e–04A and 1.439e–03A with the leakage current (Ioff) are 2.623e–05A and 2.601e–07A. The simulation results are almost identical with the theoretical.\",\"PeriodicalId\":178300,\"journal\":{\"name\":\"2010 2nd International Conference on Electronic Computer Technology\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 2nd International Conference on Electronic Computer Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICECTECH.2010.5479966\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 2nd International Conference on Electronic Computer Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECTECH.2010.5479966","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

利用Sentaurus TCAD软件，基于90nm配方设计了60nm p阱MOSFET器件，并对器件进行了表征。在这个项目中，使用Sentaurus Process和Sentaurus Device进行了两个主要的模拟。Sentaurus Process是一个半导体制造过程模拟器。而Sentaurus Device则作为设备模拟器来获取电气特性。使用INSPECT和TECPLOT SV工具在二维(2D)中查看模拟结果。60nm的NMOS和PMOS的阈值电压(Vth)分别为0.210889V和- 0.182V，漏极饱和电流(Idsat)分别为9.5755 e - 04a和1.439e-03A，漏电流(Ioff)分别为2.623e-05A和2.601e-07A。仿真结果与理论结果基本一致。

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Designing and characterization of 60nm p-well MOSFET using Sentaurus TCAD Software

A 60nm p-well MOSFET device was designed and characterized based on 90nm recipe using Sentaurus TCAD Software. In this project, there are two major simulations done using Sentaurus Process and Sentaurus Device. Sentaurus Process is a simulator for semiconductor manufacturing process. While Sentaurus Device work as a device simulator to obtain electrical characteristic. The simulations results are viewed in two dimensions (2D) using INSPECT and TECPLOT SV tools. The threshold voltages (Vth) for NMOS and PMOS of 60nm are 0.210889V and −0.182V, the drain saturation current (Idsat) are 9.575e–04A and 1.439e–03A with the leakage current (Ioff) are 2.623e–05A and 2.601e–07A. The simulation results are almost identical with the theoretical.

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来源期刊

2010 2nd International Conference on Electronic Computer Technology

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