{"title":"硅热流传感器传热过程的数值模拟","authors":"R.P. Dikareva, V.V. Grinev, E.A. Kuralin, V.A. Cherenko","doi":"10.1109/MIAME.1999.827844","DOIUrl":null,"url":null,"abstract":"The authors use finite element analysis to model two types of Si heat flow sensors, i.e. membrane- and plate-type sensors. Numerical simulation of heat transfer processes in the sensors is performed.","PeriodicalId":132112,"journal":{"name":"Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The numerical simulation of the heat-transfer processes in the silicon heat flow sensor\",\"authors\":\"R.P. Dikareva, V.V. Grinev, E.A. Kuralin, V.A. Cherenko\",\"doi\":\"10.1109/MIAME.1999.827844\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors use finite element analysis to model two types of Si heat flow sensors, i.e. membrane- and plate-type sensors. Numerical simulation of heat transfer processes in the sensors is performed.\",\"PeriodicalId\":132112,\"journal\":{\"name\":\"Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289)\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-09-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIAME.1999.827844\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIAME.1999.827844","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The numerical simulation of the heat-transfer processes in the silicon heat flow sensor
The authors use finite element analysis to model two types of Si heat flow sensors, i.e. membrane- and plate-type sensors. Numerical simulation of heat transfer processes in the sensors is performed.